The NDS0605_Q is a P-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of -180mA and a drain to source breakdown voltage of -60V. The device has a drain to source resistance of 5 ohms and a power dissipation of 360 milliwatts. The NDS0605_Q is packaged in a SOT-23 package and is available on tape and reel.
Onsemi NDS0605_Q technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -180mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 5R |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Turn-Off Delay Time | 10ns |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NDS0605_Q to view detailed technical specifications.
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