The NDS0610-NL is a P-channel MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 120mA. It has a power dissipation of 360mW and a maximum operating temperature of 150°C. The device is packaged in a SOT-23-3 package and is available in quantities of 3000 per reel. The MOSFET has a gate to source voltage of 20V and a drain to source resistance of 10R.
PackageSOT-23-3
PolarityP-CHANNEL
Power360mW
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Technical Specifications
Onsemi NDS0610-NL technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 10R |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS0610-NL Datasheet
Download the complete datasheet for Onsemi NDS0610-NL to view detailed technical specifications.
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