The NDS331N-Q is a surface-mount N-CHANNEL MOSFET from Onsemi, packaged in a SOT-23 case and available on tape and reel. It can handle a maximum operating temperature of 150°C and a minimum of -55°C. The device has a continuous drain current of 1.3A and a drain to source breakdown voltage of 20V. The MOSFET's drain to source resistance is 210 milliohms and its power dissipation is 500 milliwatts. The NDS331N-Q has a fast switching time with a fall time of 25 nanoseconds and a turn-off delay time of 10 nanoseconds.
PackageSOT-23
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Onsemi NDS331N-Q technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 210mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS331N-Q Datasheet
Download the complete datasheet for Onsemi NDS331N-Q to view detailed technical specifications.
No datasheet is available for this part.