The NDS8947_Q is a P-channel MOSFET with a continuous drain current rating of -4A and a drain to source breakdown voltage of -30V. It has a drain to source resistance of 65mR and a power dissipation of 2W. The device is packaged in tape and reel format and operates over a temperature range of -55°C to 150°C. The NDS8947_Q features a turn-off delay time of 40ns and a fall time of 19ns, with a gate to source voltage of 20V.
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Onsemi NDS8947_Q technical specifications.
| Continuous Drain Current (ID) | -4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 65mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 40ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
