The NDS9407_D84Z is a P-channel MOSFET with a continuous drain current of 3A and a drain to source breakdown voltage of -60V. It features a drain to source resistance of 150mR and a gate to source voltage of 20V. The device operates over a temperature range of -55°C to 175°C and has a power dissipation of 2.5W. It is available in tape and reel packaging.
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi NDS9407_D84Z technical specifications.
General
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 150mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS9407_D84Z Datasheet
Download the complete datasheet for Onsemi NDS9407_D84Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
