The NDS9955_L86Z is an N-CHANNEL MOSFET with a drain to source breakdown voltage of 50V and a continuous drain current of 3A. It has a drain to source resistance of 130mR and a power dissipation of 2W. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel form.
Onsemi NDS9955_L86Z technical specifications.
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 130mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 20ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
