The NDS9959_Q is an N-CHANNEL MOSFET with a continuous drain current rating of 2A and a drain to source breakdown voltage of 50V. It has a drain to source resistance of 300 milliohms and a power dissipation of 2W. The device operates between -55°C and 150°C and is packaged on tape and reel.
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| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 300mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 9ns |
| RoHS | Not Compliant |
