This device is a dual N-channel power MOSFET rated for 60 V drain-to-source voltage and up to 111 A continuous drain current at case temperature of 25°C. It provides a maximum drain-to-source on-resistance of 4.2 mΩ at 10 V gate drive and 5.8 mΩ at 4.5 V gate drive. The part is housed in a compact DFN8 5x6 mm SO8FL package for space-constrained power designs. It is specified for junction temperatures from -55°C to 175°C and includes low gate charge and capacitance to reduce switching and driver losses. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
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Onsemi NTMFD5C650NL technical specifications.
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 111A |
| Continuous Drain Current (Tc=100°C) | 88A |
| Power Dissipation (Tc=25°C) | 125W |
| Power Dissipation (Tc=100°C) | 62W |
| Continuous Drain Current (Ta=25°C) | 21A |
| Pulsed Drain Current | 502A |
| Operating Junction Temperature | -55 to 175°C |
| Drain-to-Source On-Resistance @ VGS=10 V | 4.2 maxmΩ |
| Drain-to-Source On-Resistance @ VGS=4.5 V | 5.8 maxmΩ |
| Input Capacitance | 2546pF |
| Output Capacitance | 1258pF |
| Reverse Transfer Capacitance | 17pF |
| Total Gate Charge @ VGS=4.5 V | 16nC |
| Total Gate Charge @ VGS=10 V | 37nC |
| Reverse Recovery Time | 44ns |
| Thermal Resistance Junction-to-Case | 1.37°C/W |
| Thermal Resistance Junction-to-Ambient | 46.9°C/W |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
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