N-channel logic-level power MOSFET rated for 30 V drain-to-source operation in a compact SO-8 FL package. The device supports 230 A continuous drain current at TC = 25°C and provides low maximum on-resistance of 1.15 mΩ at 10 V gate drive and 1.7 mΩ at 4.5 V gate drive. Total gate charge is 37 nC at 4.5 V and 82 nC at 10 V, helping reduce switching-drive losses. Operating junction and storage temperature range is -55°C to 150°C. The device is specified as Pb-free, halogen-free/BFR-free, and RoHS compliant.
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| Channel Type | N-Channel |
| Logic Level | Yes |
| Drain-to-Source Voltage | 30V |
| Continuous Drain Current | 230A |
| Continuous Drain Current | 41A |
| Pulsed Drain Current | 900A |
| Drain-to-Source On Resistance @ VGS=10 V | 1.15 maxmΩ |
| Drain-to-Source On Resistance @ VGS=4.5 V | 1.7 maxmΩ |
| Gate Threshold Voltage | 1.3 to 2.2V |
| Power Dissipation @ TC=25°C | 96W |
| Input Capacitance | 5780pF |
| Reverse Transfer Capacitance | 70pF |
| Total Gate Charge @ VGS=4.5 V | 37nC |
| Total Gate Charge @ VGS=10 V | 82nC |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.3°C/W |
| Thermal Resistance Junction-to-Ambient | 40°C/W |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free / Bfr Free | Yes |
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