This device is a single N-channel power MOSFET rated for 60 V drain-to-source voltage. It supports up to 71 A continuous drain current at TC = 25°C and specifies a maximum drain-to-source on-resistance of 7.0 mΩ at 10 V gate drive. The device is housed in a compact 5 x 6 mm DFN5 (SO-8FL) package and is intended for space-constrained power designs. It also features low gate charge and capacitance to reduce driver losses, operates from -55°C to +175°C junction temperature, and is Pb-free and RoHS compliant.
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Onsemi NTMFS5C670NT technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 71A |
| Continuous Drain Current (Ta=25°C) | 17A |
| Pulsed Drain Current | 440A |
| Power Dissipation (Tc=25°C) | 61W |
| Drain-to-Source On Resistance | 7.0 max @ VGS=10 VmΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Total Gate Charge | 14.4nC |
| Input Capacitance | 1035pF |
| Avalanche Energy | 166mJ |
| Junction-to-Case Thermal Resistance | 2.4°C/W |
| Junction-to-Ambient Thermal Resistance | 41°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Pb-free | Yes |
| RoHS | Compliant |
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