This single N-channel power MOSFET is rated for 60 V drain-to-source operation and 61 A continuous drain current at a case temperature of 25 °C. It provides a maximum drain-to-source on-resistance of 7.2 mΩ at 10 V gate drive and 10 mΩ at 4.5 V, with total gate charge of 17 nC at 10 V. The device is housed in a 5 x 6 mm DFN5 SO-8FL package and supports junction temperatures from -55 °C to +150 °C. It is Pb-free and RoHS compliant.
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Onsemi NTMFS5H663NL technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc = 25°C) | 61A |
| Continuous Drain Current (Ta = 25°C) | 15A |
| Pulsed Drain Current | 327A |
| Drain-to-Source On-Resistance @ VGS = 10 V | 7.2 maxmΩ |
| Drain-to-Source On-Resistance @ VGS = 4.5 V | 10 maxmΩ |
| Power Dissipation (Tc = 25°C) | 52W |
| Total Gate Charge @ VGS = 10 V | 17nC |
| Input Capacitance | 1131pF |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance, Junction-to-Case | 2.4°C/W |
| Package | DFN5 (SO-8FL) |
| RoHS | Compliant |
| Pb-free | Yes |
