This single N-channel power MOSFET is rated for 60 V drain-to-source voltage and up to 100 A continuous drain current at case temperature. It provides a maximum drain-source on-resistance of 4.0 mΩ at 10 V gate drive and 5.7 mΩ at 4.5 V, with typical total gate charge of 16 nC at 4.5 V or 34 nC at 10 V. The device is housed in a 5 x 6 mm LFPAK4 package for compact, thermally efficient layouts and supports a junction temperature range from -55 °C to +175 °C. It is Pb-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTMYS4D1N06CL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTMYS4D1N06CL technical specifications.
| Channel Polarity | N-Channel |
| Drain-to-Source Voltage | 60V |
| Continuous Drain Current (Tc = 25°C) | 100A |
| Continuous Drain Current (Ta = 25°C) | 22A |
| Power Dissipation (Tc = 25°C) | 79W |
| Drain-to-Source On-Resistance Max @ Vgs = 10 V | 4.0mΩ |
| Drain-to-Source On-Resistance Max @ Vgs = 4.5 V | 5.7mΩ |
| Gate Threshold Voltage Max | 2.0V |
| Total Gate Charge Typ @ Vgs = 4.5 V | 16nC |
| Total Gate Charge Typ @ Vgs = 10 V | 34nC |
| Input Capacitance Typ | 2200pF |
| Output Capacitance Typ | 900pF |
| Reverse Transfer Capacitance Typ | 17pF |
| Reverse Recovery Charge Typ | 32nC |
| Junction-to-Case Thermal Resistance | 1.9°C/W |
| Operating Junction Temperature Range | -55 to 175°C |
| Pb-free | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMYS4D1N06CL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
