This device is an N-channel power MOSFET rated for 650 V and 40 A in a TO-220 through-hole package. Exact-part distributor metadata identifies it as a SUPERFET III FAST device with 67 mΩ on-resistance and 266 W power dissipation. Listings also indicate a 4 V gate threshold, 112 A pulsed drain current, and RoHS compliance.
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Onsemi NTP067N65S3H technical specifications.
| Transistor Type | N-Channel |
| Drain-Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 40A |
| Pulsed Drain Current (Idm) | 112A |
| Power Dissipation | 266W |
| Drain-Source On-Resistance (Rds(on)) | 67mΩ |
| Gate Threshold Voltage | 4V |
| Package | TO-220-3 |
| RoHS | Compliant |
