This device is a single N-channel power MOSFET rated for 60 V drain-to-source voltage. It provides up to 103 A continuous drain current at Tc = 25 °C with maximum on-resistance of 3.9 mΩ at 10 V gate drive and 5.2 mΩ at 4.5 V gate drive. The device is supplied in a WDFN8 3.3 x 3.3 mm package with 32.7 nC typical total gate charge, 80 mJ single-pulse avalanche energy, and a -55 °C to +150 °C operating junction range. It is specified as Pb-free, Halogen Free/BFR Free, and RoHS compliant.
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Onsemi NTTFS3D7N06HL technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Tc=25°C) | 103A |
| Continuous Drain Current (Ta=25°C) | 16A |
| Pulsed Drain Current | 658A |
| Drain-Source On Resistance Max @ VGS=10V, ID=23A | 3.9mΩ |
| Drain-Source On Resistance Max @ VGS=4.5V, ID=18A | 5.2mΩ |
| Gate Threshold Voltage | 1.2 to 2.0V |
| Input Capacitance | 2383pF |
| Output Capacitance | 400pF |
| Reverse Transfer Capacitance | 11.7pF |
| Total Gate Charge @ VGS=10V | 32.7nC |
| Total Gate Charge @ VGS=4.5V | 15.1nC |
| Gate-Source Charge | 5.5nC |
| Gate-Drain Charge | 3.3nC |
| Single Pulse Avalanche Energy | 80mJ |
| Junction-Case Thermal Resistance | 1.5°C/W |
| Junction-Ambient Thermal Resistance | 54.8°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Package | WDFN8 3.3X3.3, 0.65P |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
