This logic-level N-channel power MOSFET is rated for 60 V drain-source voltage and 109 A continuous drain current. It uses PowerTrench T6 technology and delivers a maximum 5 mΩ RDS(on) at VGS = 10 V, with 7.3 mΩ at 4.5 V. Typical gate charge is 12 nC at 4.5 V and 27 nC at 10 V, with 1935 pF input capacitance. The device is supplied in a single WDFN-8 / u8FL package with 3.2 W maximum power dissipation, MSL 1 at 260 °C, and Pb-free, halide-free construction.
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Onsemi NTTFS5C658NL technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 109A |
| RDS(on) Max @ VGS = 10 V | 5mΩ |
| Gate-Source Voltage | 20V |
| Gate Threshold Voltage Max | 2.2V |
| Power Dissipation Max | 3.2W |
| RDS(on) Max @ VGS = 4.5 V | 7.3mΩ |
| Gate Charge Typ @ VGS = 4.5 V | 12nC |
| Gate Charge Typ @ VGS = 10 V | 27nC |
| Input Capacitance Typ | 1935pF |
| Gate-Drain Charge Typ @ VGS = 4.5 V | 2.4nC |
| Reverse Recovery Charge Typ | 15nC |
| Output Capacitance Typ | 890pF |
| Reverse Transfer Capacitance Typ | 16pF |
| Channel Polarity | N-Channel |
| Silicon Family | PowerTrench T6 |
| Gate Level | Logic |
| Configuration | Single |
| MSL Type | 1 |
| MSL Temperature | 260°C |
| Pb-free | Yes |
| AEC Qualified | No |
| Halide Free | Yes |
| Ppap Capable | No |
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