This device is a single N-channel automotive power MOSFET rated for 60 V drain-to-source voltage. It is specified for 66 A continuous drain current at 25°C case temperature and 7.0 mΩ maximum on-resistance at 10 V gate drive. The device is housed in a 5 x 6 mm LFPAK4 package and is designed for compact, thermally efficient switching applications. It is AEC-Q101 qualified, PPAP capable, Pb-free, and RoHS compliant. The datasheet specifies an operating junction and storage temperature range of -55°C to 175°C.
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Onsemi NVMYS7D0N06CTWG technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 66A |
| Continuous Drain Current (Tc=100°C) | 46.8A |
| Continuous Drain Current (Ta=25°C) | 16.9A |
| Power Dissipation (Tc=25°C) | 61.3W |
| Pulsed Drain Current | 366A |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 2.45°C/W |
| Junction-to-Ambient Thermal Resistance | 37.6°C/W |
| Drain-to-Source On Resistance (Typ) | 5.8mΩ |
| Drain-to-Source On Resistance (Max) | 7.0mΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 1035pF |
| Output Capacitance | 713pF |
| Reverse Transfer Capacitance | 9pF |
| Total Gate Charge | 14nC |
| Reverse Recovery Time | 32ns |
| Reverse Recovery Charge | 15nC |
| RoHS | Compliant |
| Pb-free | Yes |
| Aec-q101 | Qualified |
| PPAP | Capable |
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