The PN2907TAR is a PNP transistor with a collector-emitter breakdown voltage of 40V and a collector-emitter saturation voltage of 1.6V. It can handle a continuous collector current of 800mA and a maximum power dissipation of 625mW. The transistor is packaged in a TO-92-3 case and is mounted through a hole. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-92-3
MountingThrough Hole
PolarityPNP
Power625mW
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Technical Specifications
Onsemi PN2907TAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 800mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PN2907 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN2907TAR Datasheet
Download the complete datasheet for Onsemi PN2907TAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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