The PN4391_Q is an N-channel MOSFET with a drain to source breakdown voltage of 30V and a drain to source resistance of 30 ohms. It has a maximum power dissipation of 625 milliwatts and is packaged in a TO-92 case. The device is a bulk packaged component and is suitable for use in a variety of applications. It is rated for operation over a range of temperatures, but specific details are not provided. The PN4391_Q is manufactured by Onsemi.
PackageTO-92
PolarityN-CHANNEL
Power625mW
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Technical Specifications
Onsemi PN4391_Q technical specifications.
General
| Package/Case | TO-92 |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | -30V |
| Max Power Dissipation | 625mW |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 625mW |
| Series | PN4391 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi PN4391_Q Datasheet
Download the complete datasheet for Onsemi PN4391_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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