The SI3443DV_Q is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -4A and a power dissipation of 1.6W. The device features a drain to source breakdown voltage of -20V and a drain to source resistance of 65mR. The gate to source voltage is 8V, with a fall time of 19ns and a turn-off delay time of 26ns.
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi SI3443DV_Q technical specifications.
General
| Continuous Drain Current (ID) | -4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 65mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI3443DV_Q Datasheet
Download the complete datasheet for Onsemi SI3443DV_Q to view detailed technical specifications.
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