The SI3458BDV-T1-GE3 is a 300V QFET with a maximum continuous drain current of 3.2A. It features a TO-220-3 package with through hole mounting. The device is rated for a maximum power dissipation of 55W. Input capacitance is 230pF.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Onsemi SI3458BDV-T1-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 300V |
| Input Capacitance | 230pF |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 2.2R |
| Series | QFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI3458BDV-T1-GE3 Datasheet
Download the complete datasheet for Onsemi SI3458BDV-T1-GE3 to view detailed technical specifications.
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