MOSFET N-CH D-S 30V 8-SOIC
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Onsemi SI4160DY-T1-GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 1.08nF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Series | QFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI4160DY-T1-GE3 Datasheet
Download the complete datasheet for Onsemi SI4160DY-T1-GE3 to view detailed technical specifications.
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