The SI4210DY-T1-GE3 is a 2 N-Channel FET from Onsemi with a maximum drain to source voltage of 30V and continuous drain current of 3.8A. It features a maximum power dissipation of 1.5W and an on-resistance of 68 milliohms. The device is packaged in a surface mount SOIC package and is available in tape and reel format. The operating temperature range is not specified.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Onsemi SI4210DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 375pF |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 68mR |
| Series | PowerTrench® |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI4210DY-T1-GE3 Datasheet
Download the complete datasheet for Onsemi SI4210DY-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.