Onsemi SI4210DY-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 375pF |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 68mR |
| Series | PowerTrench® |
| RoHS | Compliant |
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