PackageTO-262-3
MountingThrough Hole
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Technical Specifications
Onsemi SIR416DP-T1-GE3 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 670pF |
| Max Power Dissipation | 3.13W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 2.5R |
| Series | QFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SIR416DP-T1-GE3 Datasheet
Download the complete datasheet for Onsemi SIR416DP-T1-GE3 to view detailed technical specifications.
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