The SS8550DTA_Q is a PNP transistor packaged in a TO-92 case, suitable for applications requiring high current and frequency response. It can handle a collector-emitter voltage of up to -25V and a collector base voltage of -40V. The device has a maximum operating temperature of 150°C and a maximum power dissipation of 1W. The SS8550 series is a high-performance transistor family with a minimum current gain of 85 and a gain bandwidth product of 200MHz.
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Onsemi SS8550DTA_Q technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | -25V |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 85 |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1W |
| Package Quantity | 30000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Series | SS8550 |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi SS8550DTA_Q to view detailed technical specifications.
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