The TIS75_D75Z is a TO-92-3 packaged N-CHANNEL MOSFET with a gate to source voltage of -30V and a maximum power dissipation of 350mW. It operates over a temperature range of -55°C to 150°C and is available in an ammo pack with 2000 units per package. The device is not radiation hardened and is suitable for through hole mounting.
Onsemi TIS75_D75Z technical specifications.
| Package/Case | TO-92-3 |
| Gate to Source Voltage (Vgs) | -30V |
| Input Capacitance | 18pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Series | TIS75 |
| RoHS | Compliant |
No datasheet is available for this part.
