PIN photodiode chip with 850nm peak wavelength and 0.62A/W photo sensitivity. Features a 2-pin DIL SMT package, operating temperature range of -40°C to 100°C, and a maximum reverse voltage of 32V. Maximum light current is 80 µA, with a maximum dark current of 30 nA. Si photodiode material ensures reliable performance.
Osram BPW 34 S-Z technical specifications.
| Type | Chip |
| Photodiode Type | PIN |
| Polarity | Reverse |
| Photo Sensitivity | 0.62A/W |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 100°C |
| Peak Wavelength | 850nm |
| Maximum Light Current | 80uA |
| Photodiode Material | Si |
| Maximum Forward Voltage | 1.3V |
| Maximum Dark Current | 30nA |
| Maximum Fall Time | 20ns |
| Maximum Power Dissipation | 150mW |
| Maximum Reverse Voltage | 32V |
| Maximum Rise Time | 20ns |
| Pin Count | 2 |
| Package/Case | DIL SMT |
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
