Three-channel NPN phototransistor array in a through-hole SDIP package. Features a 35V collector-emitter breakdown voltage, 50mA maximum collector current, and 90mW maximum power dissipation. Operates across a -40°C to 80°C temperature range with a 6µs fall time and 36° viewing angle. Sensitive to 850nm wavelengths, this RoHS compliant component has a domed, transparent lens.
PackageSDIP
MountingThrough Hole
PolarityNPN
Power90mW
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Technical Specifications
Osram BPX 87 technical specifications.
General
Package/Case
SDIP
Collector Emitter Breakdown Voltage
35V
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Contact Plating
Tin, Matte
Fall Time
6us
Height
3.6mm
Length
7.4mm
Lens Color
Clear
Lens Style
Domed, TRANSPARENT
Max Breakdown Voltage
35V
Max Collector Current
50mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Max Power Dissipation
90mW
Mount
Through Hole
Number of Channels
3
Number of Elements
3
Orientation
Top View
Package Material
SILICON
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Dissipation
90mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
36°
Wavelength
850nm
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
Osram BPX 87 Datasheet
Download the complete datasheet for Osram BPX 87 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.