NPN & Darlington Phototransistor, PIN Diode Type, 850nm wavelength, 0.55A/W responsivity, and 12ns response time. Features a TO-18 package with a flat lens, through-hole mounting, and a 80° viewing angle. Operates with a maximum forward current of 100mA and a maximum reverse voltage of 50V. Offers a power dissipation of 250mW and a temperature range of -40°C to 125°C.
PackageTO-18
MountingThrough Hole, PCB
Power250mW
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Technical Specifications
Osram BPX65 technical specifications.
General
Package/Case
TO-18
Diode Type
PIN
Fall Time
12ns
Forward Current
100mA
Height
5.5mm
Length
5.6mm
Lens Style
Flat
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
250mW
Max Reverse Voltage (DC)
50V
Mount
Through Hole, PCB
Package Quantity
120
Packaging
Bulk
Power Dissipation
250mW
Radiation Hardening
No
Response Time
12ns
Responsivity
0.55A/W
Reverse Breakdown Voltage
50V
Reverse Voltage (DC)
20V
RoHS Compliant
Yes
Viewing Angle
80°
Wavelength
850nm
Width
5.6mm
Compliance
RoHS
Compliant
Datasheet
Osram BPX65 Datasheet
Download the complete datasheet for Osram BPX65 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.