NPN phototransistor in a TO-18 package, featuring a 35V collector-emitter breakdown voltage and a maximum collector current of 100mA. This through-hole mount component offers a 16° viewing angle and operates within a temperature range of -40°C to 125°C, with a power dissipation of 200mW. It utilizes a domed lens style and is designed for top-view orientation, with a fall time of 9µs. RoHS compliant and packaged in bulk.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power200mW
Quick Jump:
Technical Specifications
Osram BPY62-4 technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
35V
Collector Emitter Saturation Voltage
160mV
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Contact Plating
Tin, Matte
Fall Time
9us
Height
6.2mm
Length
5.6mm
Lens Style
Domed
Max Breakdown Voltage
35V
Max Collector Current
100mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
200mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
16°
Wavelength
830nm
Width
5.6mm
Compliance
RoHS
Compliant
Datasheet
Osram BPY62-4 Datasheet
Download the complete datasheet for Osram BPY62-4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.