Silicon NPN phototransistor module for surface mount applications. Features 850nm peak wavelength and a domed lens for top view sensing. This 6-pin SMD component offers a maximum collector current of 50mA and a maximum emitter-collector voltage of 70V. Operating temperature range is -40°C to 100°C, with a maximum power dissipation of 120mW.
PackageSMD
MountingSurface Mount
PolarityNPN
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Technical Specifications
Osram Q65110-A1207 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SMD
Package/Case
SMD
Package Description
Surface Mount Device
Lead Shape
Gull-wing
Pin Count
6
PCB
6
Package Length (mm)
4.2(Max)
Package Width (mm)
3.4(Max)
Package Height (mm)
2.1(Max)
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Phototransistor Type
Phototransistor
Type
Module
Polarity
NPN
Half Intensity Angle Degrees
60°
Min Operating Temperature
-40°C
Max Operating Temperature
100°C
Viewing Orientation
Top View
Peak Wavelength
850nm
Lens Shape Type
Domed
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Maximum Emitter-Collector Voltage
7V
Maximum Collector-Emitter Voltage
70V
Maximum Dark Current
3nA
Maximum Collector Current
50mA
Maximum Collector-Emitter Saturation Voltage
0.17V
Maximum Power Dissipation
120mW
Compliance
Cage Code
CG006
EU RoHS
Yes
HTS Code
8541407080
Schedule B
8541407080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Osram Q65110-A1207 Datasheet
Download the complete datasheet for Osram Q65110-A1207 to view detailed technical specifications.
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