Silicon NPN phototransistor chip for surface mount applications. Features a 990nm peak wavelength and a 2-pin MIDLED package with flat lens. Offers a maximum collector current of 15mA, maximum collector-emitter voltage of 35V, and maximum power dissipation of 130mW. Operates within a temperature range of -40°C to 100°C.
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Osram Q65110A1573 technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | MIDLED |
| Lead Shape | No Lead |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 3.3(Max) |
| Package Width (mm) | 2.35(Max) |
| Package Height (mm) | 1.7(Max) |
| Seated Plane Height (mm) | 1.7(Max) |
| Mounting | Surface Mount |
| Phototransistor Type | Phototransistor |
| Type | Chip |
| Half Intensity Angle Degrees | 40° |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 100°C |
| Viewing Orientation | Side View |
| Peak Wavelength | 990nm |
| Maximum Light Current | 500uA |
| Lens Shape Type | Flat |
| Number of Channels per Chip | 1 |
| Fabrication Technology | Phototransistor |
| Maximum Emitter-Collector Voltage | 7V |
| Maximum Collector-Emitter Voltage | 35V |
| Maximum Dark Current | 50nA |
| Maximum Collector Current | 15mA |
| Maximum Power Dissipation | 130mW |
| Cage Code | CG006 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU |
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