Silicon NPN phototransistor chip for surface mount applications. Features a 990nm peak wavelength and a 40° half intensity angle. Operating temperature range from -40°C to 100°C. Housed in a 2-pin MIDLED package with flat lens, measuring 3.3mm(Max) L x 2.35mm(Max) W x 1.7mm(Max) H. Maximum collector current is 15mA with a maximum power dissipation of 130mW.
PackageMIDLED
MountingSurface Mount
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Technical Specifications
Osram Q65110A2663 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
MIDLED
Lead Shape
No Lead
Pin Count
2
PCB
2
Package Length (mm)
3.3(Max)
Package Width (mm)
2.35(Max)
Package Height (mm)
1.7(Max)
Seated Plane Height (mm)
1.7(Max)
Mounting
Surface Mount
Phototransistor Type
Phototransistor
Type
Chip
Half Intensity Angle Degrees
40°
Min Operating Temperature
-40°C
Max Operating Temperature
100°C
Peak Wavelength
990nm
Lens Shape Type
Flat
Number of Channels per Chip
1
Fabrication Technology
Phototransistor
Maximum Emitter-Collector Voltage
7V
Maximum Collector-Emitter Voltage
35V
Maximum Dark Current
50nA
Maximum Collector Current
15mA
Maximum Power Dissipation
130mW
Compliance
Cage Code
CG006
EU RoHS
Yes
ECCN
EAR99
Automotive
Yes
RoHS Versions
2011/65/EU
Datasheet
Osram Q65110A2663 Datasheet
Download the complete datasheet for Osram Q65110A2663 to view detailed technical specifications.
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