Silicon NPN phototransistor chip for surface mount applications. Features a peak wavelength of 990nm and a 40° half intensity angle. This 2-pin MIDLED package, with no leads, measures 3.3mm(Max) L x 2.35mm(Max) W x 1.7mm(Max) H. Operating temperature range is -40°C to 100°C, with a maximum collector current of 15mA and maximum power dissipation of 130mW.
PackageMIDLED
MountingSurface Mount
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Technical Specifications
Osram Q65110A2665 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
MIDLED
Lead Shape
No Lead
Pin Count
2
PCB
2
Package Length (mm)
3.3(Max)
Package Width (mm)
2.35(Max)
Package Height (mm)
1.7(Max)
Seated Plane Height (mm)
1.7(Max)
Mounting
Surface Mount
Phototransistor Type
Phototransistor
Type
Chip
Half Intensity Angle Degrees
40°
Min Operating Temperature
-40°C
Max Operating Temperature
100°C
Viewing Orientation
Top View
Peak Wavelength
990nm
Maximum Light Current
200/320uA
Lens Shape Type
Flat
Number of Channels per Chip
1
Fabrication Technology
Phototransistor
Maximum Emitter-Collector Voltage
7V
Maximum Collector-Emitter Voltage
35V
Maximum Dark Current
50nA
Maximum Collector Current
15mA
Maximum Collector-Emitter Saturation Voltage
0.15V
Maximum Fall Time
30000/45000ns
Maximum Power Dissipation
130mW
Maximum Rise Time
30000/45000ns
Compliance
Cage Code
CG006
EU RoHS
Yes
ECCN
EAR99
Automotive
Yes
RoHS Versions
2011/65/EU
Datasheet
Osram Q65110A2665 Datasheet
Download the complete datasheet for Osram Q65110A2665 to view detailed technical specifications.
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