NPN phototransistor chip with a peak wavelength of 870 nm, designed for top-view sensing. This 2-pin SMD component features a domed lens, a half-intensity angle of 26°, and a maximum light current of 800 µA. Operating within a temperature range of -25°C to 85°C, it offers a maximum collector-emitter voltage of 30V and a maximum collector current of 15 mA, with a maximum dark current of 50 nA. Fabrication utilizes NPN transistor technology, and the device has a maximum collector-emitter saturation voltage of 0.17V.
Osram SFH 3015 FA technical specifications.
| Phototransistor Type | Phototransistor |
| Type | Chip |
| Polarity | NPN |
| Half Intensity Angle Degrees | 26° |
| Min Operating Temperature | -25°C |
| Max Operating Temperature | 85°C |
| Viewing Orientation | Top View |
| Peak Wavelength | 870nm |
| Maximum Light Current | 800uA |
| Lens Shape Type | Domed |
| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| Maximum Emitter-Collector Voltage | 7V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Dark Current | 50nA |
| Maximum Collector Current | 15mA |
| Maximum Collector-Emitter Saturation Voltage | 0.17V |
| Maximum Fall Time | 7000ns |
| Maximum Rise Time | 7000ns |
| Pin Count | 2 |
| Package/Case | SMD |
| Package Family Name | SMD |
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Download the complete datasheet for Osram SFH 3015 FA to view detailed technical specifications.
No datasheet is available for this part.