Silicon NPN phototransistor chip, 860nm wavelength, with a 35V collector-emitter breakdown voltage. Features a T-1 package with a domed lens, through-hole mounting, and a 24° viewing angle. Operates across a -40°C to 100°C temperature range, with a maximum collector current of 15mA and 165mW power dissipation. Includes a fall time of 7µs and is RoHS compliant.
PackageT
MountingThrough Hole
PolarityNPN
Power165mW
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Technical Specifications
Osram SFH 309 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
35V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Fall Time
7us
Height
5.2mm
Length
4mm
Lens Style
Domed
Max Breakdown Voltage
35V
Max Collector Current
15mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
165mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
165mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
24°
Wavelength
860nm
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Osram SFH 309 Datasheet
Download the complete datasheet for Osram SFH 309 to view detailed technical specifications.
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