PackageDIP SMD
PolarityNPN
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Technical Specifications
Osram SFH 3410-Z technical specifications.
General
| Phototransistor Type | Phototransistor |
| Type | Chip |
| Polarity | NPN |
| Half Intensity Angle Degrees | 60° |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 100°C |
| Viewing Orientation | Side View |
| Peak Wavelength | 570nm |
| Maximum Light Current | 3.2(Min)uA |
| Lens Shape Type | Flat |
| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| Maximum Emitter-Collector Voltage | 0.5V |
| Maximum Collector-Emitter Voltage | 5.5V |
| Maximum Dark Current | 3nA |
| Maximum Collector Current | 20mA |
| Maximum Collector-Emitter Saturation Voltage | 0.1V |
| Pin Count | 3 |
| Package/Case | DIP SMD |
| Package Family Name | DIP |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Osram SFH 3410-Z Datasheet
Download the complete datasheet for Osram SFH 3410-Z to view detailed technical specifications.
No datasheet is available for this part.