Silicon NPN phototransistor chip for optical sensing applications. Features an 850nm wavelength sensitivity and a 70V collector-emitter breakdown voltage. This through-hole component offers a maximum collector current of 50mA and a power dissipation of 200mW. Operating within a -40°C to 100°C temperature range, it is housed in a 2-pin T-1 3/4 radial package with a domed lens.
PackageRadial
MountingThrough Hole
PolarityNPN
Power200mW
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Technical Specifications
Osram SFH314-2/3 technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
12us
Height
6.9mm
Length
5.9mm
Lens Style
Domed
Max Breakdown Voltage
70V
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
200mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
80°
Wavelength
850nm
Width
5.9mm
Compliance
RoHS
Compliant
Datasheet
Osram SFH314-2/3 Datasheet
Download the complete datasheet for Osram SFH314-2/3 to view detailed technical specifications.
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