Silicon NPN phototransistor chip for optical sensing applications. Features an 850nm wavelength sensitivity and a 70V collector-emitter breakdown voltage. This through-hole component offers a maximum collector current of 50mA and a power dissipation of 200mW. Operating within a -40°C to 100°C temperature range, it is housed in a 2-pin T-1 3/4 radial package with a domed lens.
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Osram SFH314-2/3 technical specifications.
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector-emitter Voltage-Max | 70V |
| Fall Time | 12us |
| Height | 6.9mm |
| Length | 5.9mm |
| Lens Style | Domed |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Viewing Angle | 80° |
| Wavelength | 850nm |
| Width | 5.9mm |
| RoHS | Compliant |
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