The Panasonic DMA502010R is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a gain bandwidth product of 150MHz and is packaged in a surface-mount SC-113CB package. The transistor is designed for use in high-frequency applications and has a maximum operating temperature of 150°C. It is compliant with RoHS regulations and is available in a tape and reel packaging format with 3000 units per reel.
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| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 150MHz |
| Height | 0.6mm |
| hFE Min | 210 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.25mm |
| RoHS | Compliant |
