NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a 130MHz gain bandwidth product and a minimum hFE of 120. Packaged in a TO-236AA (SC-59A) surface mount package, this component is HALOGEN FREE and ROHS COMPLIANT. Maximum power dissipation is 200mW with an operating temperature range up to 150°C.
Frequency130MHz
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Panasonic DSA2002R0L technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-600mV
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
-500mA
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
130MHz
Height
1.1mm
hFE Min
120
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
500mA
Max Frequency
130MHz
Max Operating Temperature
150°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
RoHS Compliant
Yes
Transition Frequency
130MHz
Width
1.5mm
Compliance
RoHS
Compliant
Datasheet
Panasonic DSA2002R0L Datasheet
Download the complete datasheet for Panasonic DSA2002R0L to view detailed technical specifications.
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