NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a 130MHz gain bandwidth product and a minimum hFE of 120. Packaged in a TO-236AA (SC-59A) surface mount package, this component is HALOGEN FREE and ROHS COMPLIANT. Maximum power dissipation is 200mW with an operating temperature range up to 150°C.
Frequency130MHz
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Panasonic DSA2002R0L technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 130MHz |
| Height | 1.1mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 1.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Panasonic DSA2002R0L Datasheet
Download the complete datasheet for Panasonic DSA2002R0L to view detailed technical specifications.
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