NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a maximum power dissipation of 200mW and a transition frequency of 150MHz. Packaged in a TO-236-3 (SC-105AA) surface-mount case, this silicon transistor is HALOGEN FREE and ROHS COMPLIANT.
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Panasonic DSC200100L technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.1mm |
| hFE Min | 210 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100uA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.5mm |
| RoHS | Compliant |
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