
NPN bipolar junction transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage and 20mA continuous collector current. Offers a minimum DC current gain (hFE) of 400 and a transition frequency of 140MHz. Packaged in a compact TO-236-3 (SC-59A) surface-mount case, this silicon transistor is halogen-free and RoHS compliant. Maximum power dissipation is 200mW, with an operating temperature range up to 150°C.
Panasonic DSC2C01S0L technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | 20mA |
| Emitter Base Voltage (VEBO) | 15V |
| Gain Bandwidth Product | 140MHz |
| Height | 1.1mm |
| hFE Min | 400 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 20mA |
| Max Frequency | 140MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| Width | 1.5mm |
| RoHS | Compliant |
Download the complete datasheet for Panasonic DSC2C01S0L to view detailed technical specifications.
No datasheet is available for this part.
