P-channel enhancement mode MOSFET, silicon, with a maximum drain-source voltage of 20V and continuous drain current of 2.1A. Features a 5-pin Mini5-G3-B surface mount package (2.9mm L x 1.5mm W x 1.1mm H) with a 0.95mm pin pitch. Maximum gate-source voltage is ±10V, with a typical gate threshold voltage of 1.3V. Offers a maximum drain-source on-resistance of 130mΩ at 4V and a maximum power dissipation of 600mW, operating from -55°C to 125°C.
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| Package/Case | Mini5-G3-B |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.1 |
| Pin Pitch (mm) | 0.95 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 2.1A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.3V |
| Maximum Drain Source Resistance | 130@4VmOhm |
| Typical Input Capacitance @ Vds | 400@10VpF |
| Maximum Power Dissipation | 600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | 61058 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
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