P-channel Silicon JFET with a continuous drain current of -4.8A and drain-to-source voltage of -12V. Features a low drain-to-source resistance of 32mR and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C. This surface-mount device is packaged in a WMINI8-F1 (SC-115) 8-pin configuration, supplied on tape and reel. Compliant with RoHS and REACH SVHC standards.
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Panasonic MTM684110LBF technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | -4.8A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.78mm |
| Input Capacitance | 1.4nF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -650mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 270ns |
| Turn-On Delay Time | 9ns |
| Width | 2.4mm |
| RoHS | Compliant |
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