P-channel JFET for small signal applications, featuring a -4A continuous drain current and a -12V drain-source breakdown voltage. This silicon FET offers a low drain-source on-resistance of 42mR (max) and operates within a -55°C to 150°C temperature range. Packaged in a compact 2mm x 1.7mm x 0.7mm SMD/SMT WSMINI6-F1-B (SC-113DA) 6-pin package, it supports surface mounting and is HALOGEN FREE and ROHS COMPLIANT.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power700mW
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Technical Specifications
Panasonic MTM761100LBF technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
-4A
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
42mR
Gate to Source Voltage (Vgs)
8V
Height
0.7mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
-650mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
700mW
Rds On Max
42mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Panasonic MTM761100LBF Datasheet
Download the complete datasheet for Panasonic MTM761100LBF to view detailed technical specifications.
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