Surface mount N-channel JFET featuring 20V drain-source voltage and 4A continuous drain current. This silicon FET offers a low drain-source on-resistance of 21.5mR, with a gate-source voltage of 12V and nominal Vgs at 850mV. With a 700mW power dissipation and operating temperature range of -55°C to 150°C, it includes input capacitance of 1.1nF and fall time of 1.5µs. The compact 2-element design is housed in an 8-pin WSMINI8-F1-B package, compliant with RoHS standards.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Panasonic MTM78E2B0LBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Panasonic MTM78E2B0LBF technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 21.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1.5us |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 1.1nF |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 2000ns |
| Turn-On Delay Time | 2000ns |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Panasonic MTM78E2B0LBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
