MTM78E2B0LBF

Surface mount N-channel JFET featuring 20V drain-source voltage and 4A continuous drain current. This silicon FET offers a low drain-source on-resistance of 21.5mR, with a gate-source voltage of 12V and nominal Vgs at 850mV. With a 700mW power dissipation and operating temperature range of -55°C to 150°C, it includes input capacitance of 1.1nF and fall time of 1.5µs. The compact 2-element design is housed in an 8-pin WSMINI8-F1-B package, compliant with RoHS standards.