Surface mount N-channel JFET featuring 20V drain-source voltage and 4A continuous drain current. This silicon FET offers a low drain-source on-resistance of 21.5mR, with a gate-source voltage of 12V and nominal Vgs at 850mV. With a 700mW power dissipation and operating temperature range of -55°C to 150°C, it includes input capacitance of 1.1nF and fall time of 1.5µs. The compact 2-element design is housed in an 8-pin WSMINI8-F1-B package, compliant with RoHS standards.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power700mW
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Technical Specifications
Panasonic MTM78E2B0LBF technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 21.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1.5us |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 1.1nF |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 2000ns |
| Turn-On Delay Time | 2000ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Panasonic MTM78E2B0LBF Datasheet
Download the complete datasheet for Panasonic MTM78E2B0LBF to view detailed technical specifications.
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