P-channel enhancement mode MOSFET for small signal applications. Features a 20V maximum drain-source voltage and 1A maximum continuous drain current. Housed in a compact 6-pin WSSMini6-F1 surface mount package with dimensions of 1.6mm x 1.4mm x 0.53mm (max). Offers a low maximum drain-source resistance of 420 mOhm at 4V. Operates across a wide temperature range from -55°C to 150°C.
PackageWSSMini6-F1
MountingSurface Mount
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Technical Specifications
Panasonic MTM86128 technical specifications.
General
Package/Case
WSSMini6-F1
Pin Count
6
PCB
6
Package Length (mm)
1.6
Package Width (mm)
1.4
Package Height (mm)
0.53(Max)
Seated Plane Height (mm)
0.5
Pin Pitch (mm)
0.5
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
1A
Material
Si
Maximum Gate Threshold Voltage
1.5V
Maximum Drain Source Resistance
420@4VmOhm
Typical Input Capacitance @ Vds
80@10VpF
Maximum Power Dissipation
540mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
61058
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Panasonic MTM86128 Datasheet
Download the complete datasheet for Panasonic MTM86128 to view detailed technical specifications.
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