The MTM861280LBF is a P-channel junction field-effect transistor with a maximum drain to source breakdown voltage of -20V and a continuous drain current of -1A. It has a drain to source resistance of 560 milliohms and a nominal Vgs of -1V. The device is packaged in a surface mount package and is compliant with RoHS and SVHC regulations. The transistor has a maximum operating temperature of 150°C and a maximum power dissipation of 540 milliwatts. It measures 1.6mm in length, 1.4mm in width, and 0.48mm in height.
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Panasonic MTM861280LBF technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | -1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 560mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.48mm |
| Input Capacitance | 80pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 540mW |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 540mW |
| Rds On Max | 420mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 12ns |
| Width | 1.4mm |
| RoHS | Compliant |
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