The UNR1114 is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a SIP package and is designed for through-hole mounting. The transistor has a maximum power dissipation of 400mW and a transition frequency of 80MHz. It is not RoHS compliant and contains lead. The UNR1114 is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageSIP
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Panasonic UNR1114 technical specifications.
General
| Package/Case | SIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -100mA |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Packaging | Bulk |
| RoHS Compliant | No |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Panasonic UNR1114 Datasheet
Download the complete datasheet for Panasonic UNR1114 to view detailed technical specifications.
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