The UNR511000L is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 150mW and a transition frequency of 80MHz. The transistor is packaged in cut tape and is suitable for use in a variety of applications. The device is manufactured by Panasonic and is a discrete semiconductor component.
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Panasonic UNR511000L technical specifications.
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -100mA |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Panasonic UNR511000L to view detailed technical specifications.
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