The UNR511200L is a surface mount bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 150mW and a transition frequency of 80MHz. The device is packaged in a cut tape format with 3000 units per reel. It is suitable for use in a variety of applications, including general-purpose switching and amplification. The transistor is rated for operation over a temperature range of -50V DC rated voltage.
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Panasonic UNR511200L technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -100mA |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Panasonic UNR511200L Datasheet
Download the complete datasheet for Panasonic UNR511200L to view detailed technical specifications.
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